Synthesis of highly anisotropic semiconducting GaTe nanomaterials and emerging properties enabled by epitaxy
Synthesis of highly anisotropic semiconducting GaTe nanomaterials and emerging properties enabled by epitaxy
Cai H, Chen B, Wang G, Soignard E, Khosravi A, Manca M, Marie X, Chang SL, Urbaszek B, Tongay S. Synthesis of highly anisotropic semiconducting GaTe nanomaterials and emerging properties enabled by epitaxy. Advanced Materials. 2017;29(8):1605551.
