Onipede BO, Metcalf M, Fletcher N, Cai H. Realizing tunable Fermi level in SnTe by defect control. 2024:arXiv:2409.08515.
Publications
2024
2022
Gu Y, Zhang L, Cai H, Liang L, Liu C, Hoffman A, Yu Y, Houston A, Puretzky AA, Duscher G, et al. Stabilized Synthesis of 2D Verbeekite: Monoclinic PdSe2 Crystals with High Mobility and In-Plane Optical and Electrical Anisotropy. ACS nano. 2022.
Zhou Y, Zhou S, Ying P, Zhao Q, Xie Y, Gong M, Jiang P, Cai H, Chen B, Tongay S, et al. Unusual Deformation and Fracture in Gallium Telluride Multilayers. The journal of physical chemistry letters. 2022;13(17):3831–3839.
Zhou Y, Zhou S, Ying P, Zhao Q, Xie Y, Gong M, Jiang P, Cai H, Chen B, Tongay S, et al. Investigation of Deformation and Fracture Mechanisms in Two-dimensional Gallium Telluride Multilayers Using Nanoindentation. arXiv preprint arXiv:2204.11031. 2022.
2021
Guo Y, Kalinin S V, Cai H, Xiao K, Krylyuk S, Davydov A V, Guo Q, Lupini AR. Defect detection in atomic-resolution images via unsupervised learning with translational invariance. npj Computational Materials. 2021;7(1):1–9.
Guo Y, Lupini AR, Cai H, Xiao K, Krylyuk S, Davydov A, Guo Q, Kalinin S. Automatic detection of crystallographic defects in STEM images by unsupervised learning with translational invariance. Microscopy and Microanalysis. 2021;27(S1):1460–1462.
Anton-Solanas C, Waldherr M, Klaas M, Suchomel H, Harder TH, Cai H, Sedov E, Klembt S, Kavokin A V, Tongay S, et al. Bosonic condensation of exciton—polaritons in an atomically thin crystal. Nature materials. 2021;20(9):1233–1239.
2020
Gu Y, Cai H, Dong J, Yu Y, Hoffman AN, Liu C, Oyedele AD, Lin Y-C, Ge Z, Puretzky AA. Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition. Advanced Materials. 2020:1906238.
Guo Y, Kalinin S, Cai H, Xiao K, Krylyuk S, Davydov A, Lupini A. Investigation of Structural Phases in Mo1-xWxTe2 in STEM. Microscopy and Microanalysis. 2020;26(S2):2362–2364.
Wu K, Blei M, Chen B, Liu L, Cai H, Brayfield C, Wright D, Zhuang H, Tongay S. Phase Transition across Anisotropic NbS3 and Direct Gap Semiconductor TiS3 at Nominal Titanium Alloying Limit. Advanced Materials. 2020;32(17):2000018.