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Investigation of Structural Phases in Mo1-xWxTe2 in STEM
Guo, Yueming, Sergei Kalinin, Hui Cai, Kai Xiao, Sergiy Krylyuk, Albert Davydov, and Andrew Lupini. 2020. “Investigation of Structural Phases in Mo1-XWxTe2 in STEM”. Microscopy and Microanalysis 26 (S2): 2362-64.
Tunable electronic structure in gallium chalcogenide van der Waals compounds
Shevitski, Brian, S\oren Ulstrup, Roland J Koch, Hui Cai, Sefaattin Tongay, Luca Moreschini, Chris Jozwiak, Aaron Bostwick, Alex Zettl, and Eli Rotenberg. 2019. “Tunable Electronic Structure in Gallium Chalcogenide Van Der Waals Compounds”. Physical Review B 100 (16): 165112.
Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene
Mercado, Elisha, Yan Zhou, Yong Xie, Qinghua Zhao, Hui Cai, Bin Chen, Wanqi Jie, Sefaattin Tongay, Tao Wang, and Martin Kuball. 2019. “Passivation of Layered Gallium Telluride by Double Encapsulation With Graphene”. ACS Omega 4 (19): 18002-10.
Optical spectroscopy of excited exciton states in MoS 2 monolayers in van der Waals heterostructures
Robert, C\ edric, MA Semina, F Cadiz, M Manca, E Courtade, T Taniguchi, K Watanabe, H Cai, Sefaattin Tongay, and Benjamin Lassagne. 2018. “Optical Spectroscopy of Excited Exciton States in MoS 2 Monolayers in Van Der Waals Heterostructures”. Physical Review Materials 2 (1): 011001.
Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition
Yang, Sijie, Hui Cai, Bin Chen, Changhyun Ko, Ongun Öz\c celik V, Frank Ogletree, Claire E White, Yuxia Shen, and Sefaattin Tongay. 2017. “Environmental Stability of 2D Anisotropic Tellurium Containing Nanomaterials: Anisotropic to Isotropic Transition”. Nanoscale 9 (34): 12288-94.
Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures
Kim, Jonghwan, Chenhao Jin, Bin Chen, Hui Cai, Tao Zhao, Puiyee Lee, Salman Kahn, Kenji Watanabe, Takashi Taniguchi, and Sefaattin Tongay. 2017. “Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures”. Science Advances 3 (7): e1700518.
Band engineering by controlling vdW epitaxy growth mode in 2D gallium chalcogenides
Cai, Hui, Emmanuel Soignard, Can Ataca, Bin Chen, Changhyun Ko, Toshihiro Aoki, Anupum Pant, Xiuqing Meng, Shengxue Yang, and Jeffrey Grossman. 2016. “Band Engineering by Controlling VdW Epitaxy Growth Mode in 2D Gallium Chalcogenides”. Advanced Materials 28 (34): 7375-82.
Fundamentals of lateral and vertical heterojunctions of atomically thin materials
Pant, Anupum, Zafer Mutlu, Darshana Wickramaratne, Hui Cai, Roger K Lake, Cengiz Ozkan, and Sefaattin Tongay. 2016. “Fundamentals of Lateral and Vertical Heterojunctions of Atomically Thin Materials”. Nanoscale 8 (7): 3870-87.
Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique
Meng, Xiuqing, Anupum Pant, Hui Cai, Jun Kang, Hasan Sahin, Bin Chen, Kedi Wu, Sijie Yang, Aslihan Suslu, and FM Peeters. 2015. “Engineering Excitonic Dynamics and Environmental Stability of Post-Transition Metal Chalcogenides by Pyridine Functionalization Technique”. Nanoscale 7 (40): 17109-15.