Wu K, Blei M, Chen B, Liu L, Cai H, Brayfield C, Wright D, Zhuang H, Tongay S. Phase Transition across Anisotropic NbS3 and Direct Gap Semiconductor TiS3 at Nominal Titanium Alloying Limit. Advanced Materials. 2020;32(17):2000018.
Publications
2020
Cai H, Yu Y, Lin Y-C, Puretzky AA, Geohegan DB, Xiao K. Heterogeneities at multiple length scales in 2D layered materials: From localized defects and dopants to mesoscopic heterostructures. Nano Research. 2020:1–25.
2019
Utama IB, Kleemann H, Zhao W, Ong CS, Felipe H, Qiu DY, Cai H, Li H, Kou R, Zhao S. A dielectric-defined lateral heterojunction in a monolayer semiconductor. Nature Electronics. 2019;2(2):60–65.
Cai H, Gu Y, Lin Y-C, Yu Y, Geohegan DB, Xiao K. Synthesis and emerging properties of 2D layered III–VI metal chalcogenides. Applied Physics Reviews. 2019;6(4):041312.
Mercado E, Zhou Y, Xie Y, Zhao Q, Cai H, Chen B, Jie W, Tongay S, Wang T, Kuball M. Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene. ACS omega. 2019;4(19):18002–18010.
Shevitski B, Ulstrup S, Koch RJ, Cai H, Tongay S, Moreschini L, Jozwiak C, Bostwick A, Zettl A, Rotenberg E. Tunable electronic structure in gallium chalcogenide van der Waals compounds. Physical Review B. 2019;100(16):165112.
Yong C-K, Utama IB, Ong CS, Cao T, Regan EC, Horng J, Shen Y, Cai H, Watanabe K, Taniguchi T. Valley-dependent exciton fine structure and Autler–Townes doublets from Berry phases in monolayer MoSe 2. Nature materials. 2019;18(10):1065–1070.
2018
Jin C, Kim J, Utama IB, Regan EC, Kleemann H, Cai H, Shen Y, Shinner MJ, Sengupta A, Watanabe K. Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures. Science. 2018;360(6391):893–896.
Robert C edric, Semina M, Cadiz F, Manca M, Courtade E, Taniguchi T, Watanabe K, Cai H, Tongay S, Lassagne B. Optical spectroscopy of excited exciton states in MoS 2 monolayers in van der Waals heterostructures. Physical Review Materials. 2018;2(1):011001.
Cai H, Chen B, Blei M, Chang SL, Wu K, Zhuang H, Tongay S. Abnormal band bowing effects in phase instability crossover region of GaSe 1-x Te x nanomaterials. Nature communications. 2018;9(1):1–8.