Yong C-K, Horng J, Shen Y, Cai H, Wang A, Yang C-S, Lin C-K, Zhao S, Watanabe K, Taniguchi T. Biexcitonic optical stark effects in monolayer molybdenum diselenide. Nature Physics. 2018;14(11):1092–1096.
Publications
2018
Shen Y, Shan B, Cai H, Qin Y, Agarwal A, Trivedi DB, Chen B, Liu L, Zhuang H, Mu B. Ultimate Control over Hydrogen Bond Formation and Reaction Rates for Scalable Synthesis of Highly Crystalline vdW MOF Nanosheets with Large Aspect Ratio. Advanced materials. 2018;30(52):1802497.
Waldherr M, Lundt N, Klaas M, Betzold S, Wurdack M, Baumann V, Estrecho E, Nalitov A, Cherotchenko E, Cai H. Observation of bosonic condensation in a hybrid monolayer MoSe 2-GaAs microcavity. Nature communications. 2018;9(1):1–6.
2017
Yang S, Wu M, Wang H, Cai H, Huang L, Jiang C, Tongay S. Ultrathin ternary semiconductor TlGaSe2 phototransistors with broad-spectral response. 2D Materials. 2017;4(3):035021.
Kim J, Jin C, Chen B, Cai H, Zhao T, Lee P, Kahn S, Watanabe K, Taniguchi T, Tongay S. Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures. Science advances. 2017;3(7):e1700518.
Cai H, Chen B, Wang G, Soignard E, Khosravi A, Manca M, Marie X, Chang SL, Urbaszek B, Tongay S. Synthesis of highly anisotropic semiconducting GaTe nanomaterials and emerging properties enabled by epitaxy. Advanced Materials. 2017;29(8):1605551.
Cadiz F, Courtade E, Robert C edric, Wang G, Shen Y, Cai H, Taniguchi T, Watanabe K, Carrere H, Lagarde D. Excitonic linewidth approaching the homogeneous limit in MoS 2-based van der Waals heterostructures. Physical Review X. 2017;7(2):021026.
Yang S, Cai H, Chen B, Ko C, celik OÖ V, Ogletree F, White CE, Shen Y, Tongay S. Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition. Nanoscale. 2017;9(34):12288–12294.
Chen B, Wu K, Suslu A, Yang S, Cai H, Yano A, Soignard E, Aoki T, March K, Shen Y. Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions. Advanced materials. 2017;29(34):1701201.
2016
Yang S, Wang C, Ataca C, Li Y, Chen H, Cai H, Suslu A, Grossman JC, Jiang C, Liu Q. Self-driven photodetector and ambipolar transistor in atomically thin GaTe-MoS2 p–n vdW heterostructure. ACS applied materials & interfaces. 2016;8(4):2533–2539.