Publications

Chen B, Wu K, Suslu A, Yang S, Cai H, Yano A, Soignard E, Aoki T, March K, Shen Y. Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions. Advanced materials. 2017;29(34):1701201.

Yang S, Wang C, Ataca C, Li Y, Chen H, Cai H, Suslu A, Grossman JC, Jiang C, Liu Q. Self-driven photodetector and ambipolar transistor in atomically thin GaTe-MoS2 p–n vdW heterostructure. ACS applied materials & interfaces. 2016;8(4):2533–2539.

Suslu A, Wu K, Sahin H, Chen B, Yang S, Cai H, Aoki T, Horzum S, Kang J, Peeters FM. Unusual dimensionality effects and surface charge density in 2D Mg (OH) 2. Scientific reports. 2016;6:20525.

Wang C, Yang S, Xiong W, Xia C, Cai H, Chen B, Wang X, Zhang X, Wei Z, Tongay S. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe 2/WS 2 p–n heterojunctions. Physical Chemistry Chemical Physics. 2016;18(40):27750–27753.

Yang S, Yue Q, Cai H, Wu K, Jiang C, Tongay S. Highly efficient gas molecule-tunable few-layer GaSe phototransistors. Journal of Materials Chemistry C. 2016;4(2):248–253.

Pant A, Mutlu Z, Wickramaratne D, Cai H, Lake RK, Ozkan C, Tongay S. Fundamentals of lateral and vertical heterojunctions of atomically thin materials. Nanoscale. 2016;8(7):3870–3887.

Cai H, Kang J, Sahin H, Chen B, Suslu A, Wu K, Peeters F, Meng X, Tongay S. Exciton pumping across type-I gallium chalcogenide heterojunctions. Nanotechnology. 2016;27(6):065203.

Wang C, Yang S, Cai H, Ataca C, Chen H, Zhang X, Xu J, Chen B, Wu K, Zhang H. Enhancing light emission efficiency without color change in post-transition metal chalcogenides. Nanoscale. 2016;8(11):5820–5825.

Wu K, Chen B, Yang S, Wang G, Kong W, Cai H, Aoki T, Soignard E, Marie X, Yano A. Domain architectures and grain boundaries in chemical vapor deposited highly anisotropic ReS2 monolayer films. Nano letters. 2016;16(9):5888–5894.

Cai H, Soignard E, Ataca C, Chen B, Ko C, Aoki T, Pant A, Meng X, Yang S, Grossman J. Band engineering by controlling vdW epitaxy growth mode in 2D gallium chalcogenides. Advanced Materials. 2016;28(34):7375–7382.