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Wang C, Yang S, Xiong W, Xia C, Cai H, Chen B, Wang X, Zhang X, Wei Z, Tongay S. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe 2/WS 2 p–n heterojunctions. Physical Chemistry Chemical Physics. 2016;18(40):27750–27753.

Yang S, Yue Q, Cai H, Wu K, Jiang C, Tongay S. Highly efficient gas molecule-tunable few-layer GaSe phototransistors. Journal of Materials Chemistry C. 2016;4(2):248–253.

Cai H, Kang J, Sahin H, Chen B, Suslu A, Wu K, Peeters F, Meng X, Tongay S. Exciton pumping across type-I gallium chalcogenide heterojunctions. Nanotechnology. 2016;27(6):065203.

Pant A, Mutlu Z, Wickramaratne D, Cai H, Lake RK, Ozkan C, Tongay S. Fundamentals of lateral and vertical heterojunctions of atomically thin materials. Nanoscale. 2016;8(7):3870–3887.

Wang C, Yang S, Cai H, Ataca C, Chen H, Zhang X, Xu J, Chen B, Wu K, Zhang H. Enhancing light emission efficiency without color change in post-transition metal chalcogenides. Nanoscale. 2016;8(11):5820–5825.

Wu K, Chen B, Yang S, Wang G, Kong W, Cai H, Aoki T, Soignard E, Marie X, Yano A. Domain architectures and grain boundaries in chemical vapor deposited highly anisotropic ReS2 monolayer films. Nano letters. 2016;16(9):5888–5894.

Cai H, Soignard E, Ataca C, Chen B, Ko C, Aoki T, Pant A, Meng X, Yang S, Grossman J. Band engineering by controlling vdW epitaxy growth mode in 2D gallium chalcogenides. Advanced Materials. 2016;28(34):7375–7382.

Meng X, Pant A, Cai H, Kang J, Sahin H, Chen B, Wu K, Yang S, Suslu A, Peeters F. Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique. Nanoscale. 2015;7(40):17109–17115.